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15 October 2012 Graphene on Ag films for reflectively conductive layer ohmic contacts to p-type GaN in GaN-based light-emitting diodes
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Abstract
We presents graphene-based reflective electrode on Ag films as a reflectively conductive layer for flip-chip GaN-based LEDs to improve optoelectronic characteristics of LEDs. The Ag/graphene films demonstrate thickness of about 200 nm and surface roughness. As annealing at temperature increases from 500°C to 800°C, the location of peak increases from 22.5° to 26.2° with the peak intensity becomes stronger. This may be attributed to the reduction of oxygen functional group. A graphene has first and second Raman-active modes at D band (1350 cm-1) and G band (1592 cm-1), respectively. Optimal conditions for graphene/Ag films contact of the sheet resistance is the smallest value by after heat treatment at temperatures of 800 °C. Further, graphene/Ag films were also applied to GaN-based light-emitting diodes to form an electrode with a p-type ohmic contact.
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Lung-Chien Chen, Ching-Ho Tien, and Min-Hsueh Chiang "Graphene on Ag films for reflectively conductive layer ohmic contacts to p-type GaN in GaN-based light-emitting diodes", Proc. SPIE 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting, 84841F (15 October 2012); https://doi.org/10.1117/12.929423
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