15 October 2012 High-yield thin GaN LED using metal bonding and laser lift-off technology
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Abstract
Gold-indium metal bonding method was used in this study to increase the product yield of vertical light emitting diodes (LEDs) during laser lift-off (LLO) process. The vertical GaN LED transferred onto Si substrate presented good electrical and optical properties due to the existence of high reflective mirror and texture surface. The chip size and dominant wavelength for vertical type LED are 40×40 mil2 and 450 nm. The optimal conditions of temperature and pressure for 2-inch wafer bonding are set of 200oC and 100 kg/inch2, respectively. The products yield of light output power, forward voltage and leakage current are 96 %, 96.4% and 61.2%, respectively. After aging test, the characteristics decay of light output power, forward voltage and leakage current are less than 4%. Summarization of optical and electrical properties, the total yield of these LEDs products is about 60 %.
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Ray-Hua Horng, Ching-Ho Chen, Wei-Cheng Kao, Dong-Sing Wuu, "High-yield thin GaN LED using metal bonding and laser lift-off technology", Proc. SPIE 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting, 84841H (15 October 2012); doi: 10.1117/12.930287; https://doi.org/10.1117/12.930287
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KEYWORDS
Light emitting diodes

Gold

Gallium nitride

Silicon

Metals

Indium

Semiconducting wafers

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