11 October 2012 Planar light source by using side-emitting of GaN die with top and bottom reflector
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Abstract
Based on Monte Carlo ray tracing we present a study of GaN die with a reflective layer coated on a p-GaN surface inside the light guide as a planar light source. We simulated the lights extracted from the GaN die implanting pyramid microstructure on the top surface of sapphire or on the top surface of p-GaN. Micro pyramid array with different slanted angle from 50 to 850 is shown to effectively improve the light extraction efficiency. In addition, the pattern sapphire substrate with slanted angle of ten degrees is found to be an effective way to increase the lateral directionality than the surface texture.
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Chi-Shou Wu, Chi-Shou Wu, Cheng-Chien Chen, Cheng-Chien Chen, Ming-Siou Tsai, Ming-Siou Tsai, Tsung-Xian Lee, Tsung-Xian Lee, Ching-Cherng Sun, Ching-Cherng Sun, } "Planar light source by using side-emitting of GaN die with top and bottom reflector", Proc. SPIE 8486, Current Developments in Lens Design and Optical Engineering XIII, 84860U (11 October 2012); doi: 10.1117/12.929531; https://doi.org/10.1117/12.929531
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