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15 October 2012 Semiconductor nanowire field-effect transistors: towards high-frequency THz detectors
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We report about fabrication and characterization of semiconductor nanowire-based field effect transistor devices which can act as detectors for electromagnetic radiation in the THz frequency range. The detection mechanism is based on the nonlinear transfer characteristic of the transistor, which is used to realize signal rectification; the small capacitance related to the nanowire small cross section is beneficial in allowing a good device sensitivity up to 1.5 THz at room temperature. Due to the extreme flexibility with which semiconductor nanowires can be grown, we discuss how the basic, homogeneous InAs or InSb nanowire FETs can be improved to realize smarter devices and functionalities.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Pitanti, M. S. Vitiello, L. Romeo, D. Coquillat, F. Teppe, W. Knap, D. Ercolani, L. Sorba, and A. Tredicucci "Semiconductor nanowire field-effect transistors: towards high-frequency THz detectors", Proc. SPIE 8496, Terahertz Emitters, Receivers, and Applications III, 84960N (15 October 2012);

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