24 October 2012 Characterization of thallium-based ternary semiconductor compounds for radiation detection
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We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl3SbS3, Tl2SnS3, and Tl7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.
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Zhifu Liu, Zhifu Liu, John A. Peters, John A. Peters, Sandy Nguyen, Sandy Nguyen, Maria Sebastian, Maria Sebastian, Bruce W. Wessels, Bruce W. Wessels, Shichao Wang, Shichao Wang, Hosub Jin, Hosub Jin, Jino Im, Jino Im, Arthur J. Freeman, Arthur J. Freeman, Mercouri G. Kanatzidis, Mercouri G. Kanatzidis, "Characterization of thallium-based ternary semiconductor compounds for radiation detection", Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 85070O (24 October 2012); doi: 10.1117/12.928325; https://doi.org/10.1117/12.928325


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