24 October 2012 Correlation of dislocations and Te inclusions in detector-grade CdZnTe crystals grown by MVB method
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Abstract
We have developed the detached Bridgman process for growth of CdZnTe crystals. Detachment of the solidification interface from the growth ampoule results in a low density of dislocations in the grown material and large single crystal grains. The detached Bridgman process also provides for direct control of the melt composition close to the growth front, allowing for accurate control of both the density of the Te/Cd precipitates as well as the majority carrier concentration in the grown material. The influence of melt-composition control and compensation by shallow and deep donors on detector performance is presented.
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Yadong Xu, Yadong Xu, Yihui He, Yihui He, Lingyan Xu, Lingyan Xu, Tao Wang, Tao Wang, Gangqiang Zha, Gangqiang Zha, Wanqi Jie, Wanqi Jie, } "Correlation of dislocations and Te inclusions in detector-grade CdZnTe crystals grown by MVB method", Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 850710 (24 October 2012); doi: 10.1117/12.928176; https://doi.org/10.1117/12.928176
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