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24 October 2012 Structural characteristics of Zn1-xMnxTe polycrystalline films
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Abstract
Manganese-doped A2(1-x)MnxB6 diluted magnetic semiconductors have recently attracted a great attention as a new class of semiconductors, because they exhibit an interesting combination of magnetic and semiconductor properties. Zn1-xMnxTe films were deposited by the closed space vacuum sublimation method on the glass substrates. Particle induced X-ray emission method was applied for determination of the film chemical composition. Structural investigations of the films were performed using X-ray diffractometer with CuKα radiation. The obtained results enabled to determine the effect of the growth conditions on the main structural parameters (lattice parameters, SDS, microdeformation levels) and chemical compositions of the films.
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D. I. Kurbatov, O. V. Klymov, A. S. Opanasyuk, A. G. Ponomarev, P. M. Fochuk, and H. M. Khlyap "Structural characteristics of Zn1-xMnxTe polycrystalline films", Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 85071J (24 October 2012); https://doi.org/10.1117/12.928990
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