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1 July 2013 Minority carrier lifetime and photoluminescence studies of antimony-based superlattices
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Abstract
In this work, we have used the optical modulation response technique to investigate the minority carrier lifetimes in (42 Å, 21 Å) InAs/GaSb superlattices. The feasibility of using a visible 643 nm excitation source with short penetration depth was investigated by comparing the results to reference measurements performed with a 1550 nm IR laser. Minority carrier lifetimes in the range of 33 – 38 ns were observed, in good agreement with the reference measurements. Furthermore, when comparing superlattices with essentially the same PL peak wavelength, correlation between the minority carrier lifetime and the PL intensity was observed. This shows that the PL intensity serves as a good indicator of the material quality.
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Linda Höglund, Alexander Soibel, David Z. Ting, Arezou Khoshakhlagh, Cory J. Hill, and Sarath D. Gunapala "Minority carrier lifetime and photoluminescence studies of antimony-based superlattices", Proc. SPIE 8511, Infrared Remote Sensing and Instrumentation XX, 851106 (1 July 2013); https://doi.org/10.1117/12.930136
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