15 October 2012 Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices
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Proceedings Volume 8512, Infrared Sensors, Devices, and Applications II; 85120L (2012); doi: 10.1117/12.930949
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States
Abstract
Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both non-radiative and radiative recombination mechanisms apparent, with comparable contributions from both near 77 K, and radiative recombination dominating at low temperatures. Samples with short periods and large wave function overlaps have radiative recombination dominating from 10 K until ~200 K. The improved lifetimes observed will enable long minority carrier lifetime superlattices to be designed for high quantum efficiency, low dark current infrared detectors.
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E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W. K. Liu, S. Elhamri, O. O. Cellek, Y.-H. Zhang, "Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices", Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120L (15 October 2012); doi: 10.1117/12.930949; https://doi.org/10.1117/12.930949
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KEYWORDS
Stereolithography

Superlattices

Temperature metrology

Astatine

Long wavelength infrared

Sensors

Electrons

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