19 October 2012 Design and development of low dark current SLS detectors for IRFPA applications
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We present the performance of a unipolar barrier long-wave type-II InAs/GaSb superlattice (SLS) photodetector with a 50% cut-off wavelength of approximately 8.7 microns. In this study, the ability to lower dark current densities over traditional PIN diodes is presented by way of hetero-structure engineering of a pBiBn structure utilizing superlattice Ptype (P) and N-type (N) contacts, Intrinsic (I) superlattice active (absorber) region, and unipolar superlattice electron and hole blocking (b) layers. The spectral response of this pBiBn detector structure was determined using a Fourier Transform Infrared (FTIR) Spectrometer and the quantum efficiency (QE) was determined using a narrow 6250 nm narrow band filter and a 500K blackbody source. A diode structure designed, grown, and fabricated in this study yielded a dark current density of less than one (1) mA/cm2 at a reverse bias of 150 mV and a specific detectivity value of greater than 1011 Jones at 77K. In addition to single point temperature measurements, a variable temperature study (80K-300K) of the dark current is presented for a diode demonstrating diffusion limited dark current from 160K down to 80K.
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Eric A. DeCuir, Eric A. DeCuir, Nutan Gautam, Nutan Gautam, Gregory P. Meissner, Gregory P. Meissner, Priyalal Wijewarnasuriya, Priyalal Wijewarnasuriya, Sanjay Krishna, Sanjay Krishna, Nibir K. Dhar, Nibir K. Dhar, Thomas G. Bramhall, Thomas G. Bramhall, Roger E. Welser, Roger E. Welser, Ashok K. Sood, Ashok K. Sood, } "Design and development of low dark current SLS detectors for IRFPA applications", Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120N (19 October 2012); doi: 10.1117/12.974237; https://doi.org/10.1117/12.974237

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