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15 October 2012 Silicon pin diodes for remote sensing
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Abstract
Silicon photon detectors and focal plane arrays (FPAs) are fabricated in many varieties1,2. Their function depends on the detector architecture, dopants, and operating temperature. DRS has fabricated silicon pin detectors that cover the visible spectral range and blocked impurity band (BIB) detectors that cover the very-long-wavelength infrared (VLWIR) region3. Imaging arrays of silicon pin-diodes utilize the intrinsic bandgap of silicon to provide high photo response over the 0.4 – 1.0 μm spectral range. The detectors operate at or near room temperature as required. Silicon pin-diode arrays are particularly attractive as an alternative to charge-coupled devices (CCDs) for space applications where radiation hardening is needed. Pros and cons of CCD and pin diode architectures are listed in Reference4.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ernest Robinson, Arvind D'Souza, Phil Ely, and Craig Yoneyama "Silicon pin diodes for remote sensing", Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120Q (15 October 2012); https://doi.org/10.1117/12.970311
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