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15 October 2012 First observation of a plasmon-mediated tunable photoresponse in a grating-gated InGaAs/InP HEMT for millimeter-wave detection
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Abstract
A tunable resonant photoresponse to millimeter-waves is demonstrated in a grating-gated high electron mobility transistor (HEMT) formed by an InGaAs/InP heterostructure. The gate consists of a metal grating with 9 μm period, which was designed to couple mm-radiation to plasmons in the two-dimensional electron gas (2DEG) of the HEMT. The resonant excitation of plasmons, which shifts with gate-bias, changes the channel conductance. These devices have potential as chip-scale frequency-agile mm-wave detectors, which may be scaled to THz frequencies.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nima Nader Esfahani, Robert E. Peale, Walter R. Buchwald, Joshua R. Hendrickson, and Justin W. Cleary "First observation of a plasmon-mediated tunable photoresponse in a grating-gated InGaAs/InP HEMT for millimeter-wave detection", Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120Y (15 October 2012); https://doi.org/10.1117/12.930359
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