8 November 2012 An enhanced measure of mask quality using separated models
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Proceedings Volume 8522, Photomask Technology 2012; 852207 (2012); doi: 10.1117/12.964379
Event: SPIE Photomask Technology, 2012, Monterey, California, United States
Mask Error Enhancement Factor (MEEF) has been a standard measure of mask quality [1]. One of the key assumptions in the construction of MEEF is that mask CD uniformity is not dependent on the shape of mask feature and can be considered to be a constant for given mask process. This assumption is no longer valid for small (<100nm), curvilinear or diagonal features. In this paper we extend definition of MEEF to be valid for all mask shapes call new metric extended MEEF or eMEEF. We also demonstrate on the example of ILT features that eMEEF increases predictability of mask and wafer CD uniformity sometimes changing overall conclusion about mask/wafer manufacturability.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony Adamov, Bob Pack, Kazuyuki Hagiwara, Ingo Bork, Jin Choi, Jissong Park, Byung-Gook Kim, "An enhanced measure of mask quality using separated models", Proc. SPIE 8522, Photomask Technology 2012, 852207 (8 November 2012); doi: 10.1117/12.964379; https://doi.org/10.1117/12.964379


Semiconducting wafers

Critical dimension metrology

Monte Carlo methods

Quality measurement


Model-based design

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