8 November 2012 An enhanced measure of mask quality using separated models
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Abstract
Mask Error Enhancement Factor (MEEF) has been a standard measure of mask quality [1]. One of the key assumptions in the construction of MEEF is that mask CD uniformity is not dependent on the shape of mask feature and can be considered to be a constant for given mask process. This assumption is no longer valid for small (<100nm), curvilinear or diagonal features. In this paper we extend definition of MEEF to be valid for all mask shapes call new metric extended MEEF or eMEEF. We also demonstrate on the example of ILT features that eMEEF increases predictability of mask and wafer CD uniformity sometimes changing overall conclusion about mask/wafer manufacturability.
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Anthony Adamov, Anthony Adamov, Bob Pack, Bob Pack, Kazuyuki Hagiwara, Kazuyuki Hagiwara, Ingo Bork, Ingo Bork, Jin Choi, Jin Choi, Jissong Park, Jissong Park, Byung-Gook Kim, Byung-Gook Kim, } "An enhanced measure of mask quality using separated models", Proc. SPIE 8522, Photomask Technology 2012, 852207 (8 November 2012); doi: 10.1117/12.964379; https://doi.org/10.1117/12.964379
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