8 November 2012 Study of critical dimension uniformity (CDU) using a mask inspector
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Proceedings Volume 8522, Photomask Technology 2012; 85220C (2012); doi: 10.1117/12.977944
Event: SPIE Photomask Technology, 2012, Monterey, California, United States
Abstract
This paper studies the repeatability and the reliability of CDUs from a mask inspector and their correlation with CD SEM measurements on various pattern attributes such as feature sizes, tones, and orientations. Full-mask image analysis with a mask inspector is one of potential solutions for overcoming the sampling rate limitation of a mask CD SEM. By comparing the design database with the inspected dimension, the complete CDU behavior of specific patterns can be obtained without extra work and tool time. These measurements can be mapped and averaged over various spatial lengths to determine changes in relative CDU across the mask. Eventually, success of this methodology relies on the optical system of the inspector being highly stable.
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Mei-Chun Lin, Ching-Fang Yu, Mei-Tsu Lai, Luke T. H. Hsu, Angus Chin, Anthony Yen, "Study of critical dimension uniformity (CDU) using a mask inspector", Proc. SPIE 8522, Photomask Technology 2012, 85220C (8 November 2012); doi: 10.1117/12.977944; http://dx.doi.org/10.1117/12.977944
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KEYWORDS
Inspection

Critical dimension metrology

Scanning electron microscopy

Photomasks

Visualization

Opacity

Metrology

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