8 November 2012 EUV mask inspection study for sub-20nm device
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Proceedings Volume 8522, Photomask Technology 2012; 85220M (2012); doi: 10.1117/12.964964
Event: SPIE Photomask Technology, 2012, Monterey, California, United States
Abstract
Reflected light inspection has been used to inspect EUVL mask which consists of multi layers and metal absorber. However, sub-wavelength half pitch patterns and reflected inspection make unprecedented phenomenon like tone inversion. These lead EUV inspection more difficult in detectability and inspectability for separating out defects and false. In this study, we report the evaluation result of inspection dependency of illumination conditions like OAI(Off-Axis Illumination), sigma and polarization for sub-20nm EUVL PDM(programmed defect mask). With inspection of sub- 20nm device mask, we finally address the inspection feasibility for sub-20nm device and the future direction of inspection technology.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Inkyun Shin, Gisung Yoon, Ji Hoon Na, Paul D. H. Chung, Chan-Uk Jeon, "EUV mask inspection study for sub-20nm device", Proc. SPIE 8522, Photomask Technology 2012, 85220M (8 November 2012); doi: 10.1117/12.964964; https://doi.org/10.1117/12.964964
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KEYWORDS
Inspection

Photomasks

Extreme ultraviolet

Extreme ultraviolet lithography

Semiconducting wafers

Polarization

Printing

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