Novel DPT methodology co-optimized with design rules for sub-20nm device

Hyun-Jong Lee; Soo-Han Choi; Jae-Seok Yang; Kwan-Young Chun; Jeong-ho Do; Chul-Hong Park

doi:10.1117/12.964976

Translator Disclaimer

8 November 2012 Novel DPT methodology co-optimized with design rules for sub-20nm device

Hyun-Jong Lee; Soo-Han Choi; Jae-Seok Yang; Kwan-Young Chun; Jeong-ho Do; Chul-Hong Park

Author Affiliations +

Proceedings Volume 8522, Photomask Technology 2012; 85220T (2012) https://doi.org/10.1117/12.964976
Event: SPIE Photomask Technology, 2012, Monterey, California, United States

Abstract

Because extreme ultra violet (EUV) lithography is not ready due to technical challenges and low throughput, we are facing severe limitation for sub-20nm node patterning even though the extreme resolution enhancement technology (RET) such as the off-axis illumination and computational lithography have been used to achieve enough process window and critical dimension uniformity (CDU). As an alternative solution, double patterning technology (DPT) becomes the essential patterning scheme for the sub-20nm technology node. DPT requires the complex design rules because DPT rules need to consider layout decomposability into two masks. In order to improve CDU and to achieve both design rule simplicity and better designability, we propose two kinds of layout decomposition methodologies in this paper; 1) new mandrel decomposition of the Fin generation for better uniformity, 2) chip-level decomposition and colorless design rule of the contact to improve the scalability. Co-optimized design rules, decomposition method and process requirement enable us to obtain about 6% scaling benefits by comparison with normal DPT flow. These DPT approaches provide benefits for both process and design.

Citation Download Citation

Hyun-Jong Lee, Soo-Han Choi, Jae-Seok Yang, Kwan-Young Chun, Jeong-ho Do, and Chul-Hong Park "Novel DPT methodology co-optimized with design rules for sub-20nm device", Proc. SPIE 8522, Photomask Technology 2012, 85220T (8 November 2012); doi: 10.1117/12.964976; https://doi.org/10.1117/12.964976

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account

Institutional Access:

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years