Interactions of 3D mask effects and NA in EUV lithography

Jens Timo Neumann; Paul Gräupner; Winfried Kaiser; Reiner Garreis; Bernd Geh

doi:10.1117/12.2009117

8 November 2012 Interactions of 3D mask effects and NA in EUV lithography

Jens Timo Neumann, Paul Gräupner, Winfried Kaiser, Reiner Garreis, Bernd Geh

Proceedings Volume 8522, Photomask Technology 2012; 852211 (2012) https://doi.org/10.1117/12.2009117
Event: SPIE Photomask Technology, 2012, Monterey, California, United States

Abstract

With high NA (>0.33), and the associated higher angles of incidence on the reflective EUV mask, mask induced effects will significantly impact the overall scanner-performance. We discuss the expected effects in detail, in particular paying attention to the interaction between reflective coating and absorber on the mask, and show that there is a trade-off between image quality and mask efficiency. We show that by adjusting the demagnification of the lithography system one can recover both image quality and mask efficiency.

Citation Download Citation

Jens Timo Neumann, Paul Gräupner, Winfried Kaiser, Reiner Garreis, and Bernd Geh "Interactions of 3D mask effects and NA in EUV lithography", Proc. SPIE 8522, Photomask Technology 2012, 852211 (8 November 2012); https://doi.org/10.1117/12.2009117

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