8 November 2012 Interactions of 3D mask effects and NA in EUV lithography
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With high NA (>0.33), and the associated higher angles of incidence on the reflective EUV mask, mask induced effects will significantly impact the overall scanner-performance. We discuss the expected effects in detail, in particular paying attention to the interaction between reflective coating and absorber on the mask, and show that there is a trade-off between image quality and mask efficiency. We show that by adjusting the demagnification of the lithography system one can recover both image quality and mask efficiency.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens Timo Neumann, Jens Timo Neumann, Paul Gräupner, Paul Gräupner, Winfried Kaiser, Winfried Kaiser, Reiner Garreis, Reiner Garreis, Bernd Geh, Bernd Geh, } "Interactions of 3D mask effects and NA in EUV lithography", Proc. SPIE 8522, Photomask Technology 2012, 852211 (8 November 2012); doi: 10.1117/12.2009117; https://doi.org/10.1117/12.2009117


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