8 November 2012 The significance of rigorous electromagnetic field simulation on mask development for 20nm optical lithography technology
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Abstract
For 20 nm technology, rigorous electromagnetic field (EMF) simulation is important to predict correct lithography performance in mask development. Three mask absorbers with different total thickness and materials are used in the paper to explore the impact of thickness. The side wall profiles could also have the potential to change the process variation band (PV Band). By using rigorous EMF simulation to calculate a usual process variation band, the result shows the best focus shift changes through patterns, and leads to a CD impact caused by defocus. A new PV Band setting with side wall angle as a variable is used to show the significant impact.
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Fan Jiang, Yunfei Deng, Jongwook Kye, Harry J. Levinson, Paul Ackmann, Byoung Il Choi, Frank Schurack, Martin Sczyrba, "The significance of rigorous electromagnetic field simulation on mask development for 20nm optical lithography technology", Proc. SPIE 8522, Photomask Technology 2012, 852219 (8 November 2012); doi: 10.1117/12.964292; https://doi.org/10.1117/12.964292
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