OPC and verification for LELE double patterning

Kellen Arb; Chris Reid; Qiao Li; Evgueni Levine; Pradiptya Ghosh

doi:10.1117/12.979143

8 November 2012 OPC and verification for LELE double patterning

Kellen Arb; Chris Reid; Qiao Li; Evgueni Levine; Pradiptya Ghosh

Author Affiliations +

Proceedings Volume 8522, Photomask Technology 2012; 85221B (2012) https://doi.org/10.1117/12.979143
Event: SPIE Photomask Technology, 2012, Monterey, California, United States

Abstract

LELE double patterning technology is being deployed for 20nm production. With the use of two separate litho-etch steps in the lithography of one layer, LELE doubles the pitch achievable in the tradional single litho-etch step. However, as wavelength of the light used in each litho-etch step is as before, the need for OPC remains, and is even more crucial.

In this paper, we will present the needs and mechanisms for simultaneous OPC for both masks, the extra freedom avaliable in DP OPC, and the extra consideration needed in developing LELE OPC recipe such as SRAF insertion. biasing.

Citation Download Citation

Kellen Arb, Chris Reid, Qiao Li, Evgueni Levine, Pradiptya Ghosh, "OPC and verification for LELE double patterning", Proc. SPIE 8522, Photomask Technology 2012, 85221B (8 November 2012); doi: 10.1117/12.979143; https://doi.org/10.1117/12.979143

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