Photomask film degradation effects in the wafer fab: how to detect and monitor over time

John Whittey; Carl Hess; Edgardo Garcia; Mark Wagner; Brian Duffy

doi:10.1117/12.968166

8 November 2012 Photomask film degradation effects in the wafer fab: how to detect and monitor over time

John Whittey, Carl Hess, Edgardo Garcia, Mark Wagner, Brian Duffy

Author Affiliations +

Proceedings Volume 8522, Photomask Technology 2012; 85221D (2012) https://doi.org/10.1117/12.968166
Event: SPIE Photomask Technology, 2012, Monterey, California, United States

Abstract

As a result of repeated cleanings and exposure effects such as chrome migration or MoSi oxidation some photomasks in the semiconductor fabs exhibit changes in critical dimension uniformity (CDU) over time. Detecting these effects in a timely manner allows for better risk management and process control in manufacturing. By monitoring changes in film reflectance intensity due to the various degradation mechanisms it is possible to predict when they may begin to influence across chip line width variations (ACLV). By accurately predicting the magnitude of these changes it is possible for semiconductor manufacturers to replace the photomasks before they have an impact on yields. This paper looks at possible causes of CDU variations on reticles during use and how this information might be used to improve or monitor reticle CDU changes over time.

Citation Download Citation

John Whittey, Carl Hess, Edgardo Garcia, Mark Wagner, and Brian Duffy "Photomask film degradation effects in the wafer fab: how to detect and monitor over time", Proc. SPIE 8522, Photomask Technology 2012, 85221D (8 November 2012); https://doi.org/10.1117/12.968166

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