Paper
8 November 2012 Proposal of an extended loading effect correction for EBM-8000
Author Affiliations +
Abstract
To enhance global CDU attained by our EB mask writer EBM-8000, we examined extending the loading effect correction (LEC) function to treat plural of loading effects, for instance, develop and etch loading. Here, we propose a LEC dose composition method, assuming uniquely-defined relation between amount of dose modulation and resultant CD change. Sets of LEC dose maps (pairs of base dose maps and proximity backscattering ratio maps) are converted to sets of CD change maps which are summarized to create a set of dose maps used for writing. This paper describes the correction procedure and possible applications of the method.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Matsumoto, Yasuo Kato, Noriaki Nakayamada, Shusuke Yoshitake, and Kiyoshi Hattori "Proposal of an extended loading effect correction for EBM-8000", Proc. SPIE 8522, Photomask Technology 2012, 85221G (8 November 2012); https://doi.org/10.1117/12.975920
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KEYWORDS
Critical dimension metrology

Modulation

Etching

Photomasks

Scattering

Backscatter

Error analysis

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