8 November 2012 Printing results of a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)
Author Affiliations +
Abstract
Printing results as achieved with a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC) within 1cm2 specification write fields on 6” mask blanks are reported. The eMET POC consists of a column with 200x reduction optics. Inserted into the column is a CMOS addressable (max. 12.8 Gbits/s) blanking device, providing 256k (k=1024) programmable beams within 82μm x 82μm beam array fields. Multi-beam exposures are done on 150mm Si monitor wafers and 6” mask blanks moved at constant speed (up to 1.23 mm/s) with a high precision (1nm 1sigma) laser-interferometer controlled stage in stripes of 82 μm width (2μm overlap between adjacent stripes). Detailed evaluation results with respect to resolution, CDU, linearity, distortion control and stability, as well as OPC and ILT exposure capabilities are presented. Exposures on 0.1nm address grid are demonstrated.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elmar Platzgummer, Elmar Platzgummer, Christof Klein, Christof Klein, Hans Loeschner, Hans Loeschner, } "Printing results of a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)", Proc. SPIE 8522, Photomask Technology 2012, 85221H (8 November 2012); doi: 10.1117/12.964988; https://doi.org/10.1117/12.964988
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top