Previously, KLA-Tencor reported on the development of a Reflective Electron Beam Lithography (REBL) tool for maskless lithography at and below the 22 nm technology node1. Since that time, the REBL team and its partners (TSMC, IMEC) have made good progress towards developing the REBL system and Digital Pattern Generator (DPG) for direct write lithography. Traditionally, e-beam direct write lithography has been too slow for most lithography applications. Ebeam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the continued uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for HVL.
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Regina Freed, Thomas Gubiotti, Jeff Sun, Anthony Cheung, Jason Yang, Mark McCord, Paul Petric, Allen Carroll, Upendra Ummethala, Layton Hale, John Hench, Shinichi Kojima, Walter Mieher, Chris F. Bevis, "Reflective electron-beam lithography performance for the 10nm logic node," Proc. SPIE 8522, Photomask Technology 2012, 85221J (8 November 2012);