8 November 2012 EUVL mask repair: expanding options with nanomachining
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Mask defectivity is often cited as a barrier to EUVL manufacturing, falling just behind low source power. Mask defectivity is a combination of intrinsic blank defects, defects introduced during the mask fabrication and defects introduced during the use of the mask in the EUV exposure tool. This paper works towards minimizing the printing impact of blank defects so that the final EUVL mask can achieve a lower defectivity. Multilayer defects can be created by a step or scratch as shallow as 1nm in the substrate. These small defects create coherent disruptions in the multilayer that can generate significant variations in mask reflectivity and induce clearly-defined, printable defects. If the optical properties of the defect can be well understood, nanomachining repair processes can be deployed to fix these defects. The purpose of this work is to develop new nanomachining repair processes and approaches that can repair complex EUVL mask defects by targeted removal of the EUVL mask materials. The first phase of this work uses nanomachining to create artificial phase defects of different types and sizes for both printability evaluation and benchmarking with simulation. Experimental results validate the concept, showing a reasonable match between imaging with the LBNL Actinic Inspection Tool (AIT) and simulation of the mask topography measured by AFM. Once the printability of various nanomachined structures is understood, the second phase of the work aims to optimize the process to repair real EUVL mask defects with surrounding absorber patterns.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emily Gallagher, Emily Gallagher, Gregory McIntyre, Gregory McIntyre, Mark Lawliss, Mark Lawliss, Tod Robinson, Tod Robinson, Ronald Bozak, Ronald Bozak, Roy White, Roy White, Jeff LeClaire, Jeff LeClaire, "EUVL mask repair: expanding options with nanomachining", Proc. SPIE 8522, Photomask Technology 2012, 85221L (8 November 2012); doi: 10.1117/12.974749; https://doi.org/10.1117/12.974749


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