Paper
8 November 2012 Ebeam based mask repair as door opener for defect free EUV masks
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Abstract
The EUV-photomask is used as mirror and no longer as transmissive device. In order to yield defect-free reticles, repair capability is required for defects in the absorber and for defects in the mirror. Defects can propagate between the EUV mask layers, which makes the detection and the repair complex or impossible if conventional methods are used. In this paper we give an overview of the different defect types. We discuss the EUV repair requirements including SEM-invisible multilayer defects and blank defects, and demonstrate e-beam repair performance. The repairs are qualified by SEM, AFM and wafer prints. Furthermore a new repair strategy involving in-situ AFM is introduced. This new strategy is applied on natural defects and the repair quality is verified using state of the art EUV wafer printing technology.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Markus Waiblinger, Tristan Bret, Rik Jonckheere, and Dieter Van den Heuvel "Ebeam based mask repair as door opener for defect free EUV masks", Proc. SPIE 8522, Photomask Technology 2012, 85221M (8 November 2012); https://doi.org/10.1117/12.966387
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Cited by 9 scholarly publications.
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KEYWORDS
Photomasks

Extreme ultraviolet

Scanning electron microscopy

Semiconducting wafers

Reticles

Mirrors

Atomic force microscopy

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