8 November 2012 Efficient simulation of EUV multilayer defects with rigorous data base approach
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Abstract
This paper presents the extension of the well-established rigorous electromagnetic field (EMF) solver Waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects using a rigorously computed multilayer defect data base combined with on demand computed absorber structures. Typical computation times are in the range of seconds up to a few minutes. The new simulation approach will be presented. Selected simulation examples and a defect repair example demonstrate the functionality and the capability to perform fast, highly accurate and flexible EUV multilayer defect computations.
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Peter Evanschitzky, Peter Evanschitzky, Feng Shao, Feng Shao, Andreas Erdmann, Andreas Erdmann, } "Efficient simulation of EUV multilayer defects with rigorous data base approach", Proc. SPIE 8522, Photomask Technology 2012, 85221S (8 November 2012); doi: 10.1117/12.964282; https://doi.org/10.1117/12.964282
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