8 November 2012 Photomask quality evaluation using lithography simulation and precision SEM image contour data
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Abstract
To evaluate photomask quality, the current method uses spatial imaging by optical inspection tools. This technique at 1Xnm node has a resolution limit because small defects will be difficult to extract. To simulate the mask error-enhancement factor (MEEF) influence for aggressive OPC in 1Xnm node, wide FOV contour data and tone information are derived from high precision SEM images. For this purpose we have developed a new contour data extraction algorithm with sub-nanometer accuracy resulting in a wide Field of View (FOV) SEM image: (for example, more than 10um x 10um square). We evaluated MEEF influence of high-end photomask pattern using the wide FOV contour data of "E3630 MVM-SEMTM" and lithography simulator "TrueMaskTM DS" of D2S, Inc. As a result, we can detect the "invisible defect" as the MEEF influence using the wide FOV contour data and lithography simulator.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsutomu Murakawa, Tsutomu Murakawa, Naoki Fukuda, Naoki Fukuda, Soichi Shida, Soichi Shida, Toshimichi Iwai, Toshimichi Iwai, Jun Matsumoto, Jun Matsumoto, Takayuki Nakamura, Takayuki Nakamura, Kazuyuki Hagiwara, Kazuyuki Hagiwara, Shohei Matsushita, Shohei Matsushita, Daisuke Hara, Daisuke Hara, Anthony Adamov, Anthony Adamov, } "Photomask quality evaluation using lithography simulation and precision SEM image contour data", Proc. SPIE 8522, Photomask Technology 2012, 852226 (8 November 2012); doi: 10.1117/12.964994; https://doi.org/10.1117/12.964994
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