8 November 2012 Evaluation of CP shape correction for e-beam writing
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Proceedings Volume 8522, Photomask Technology 2012; 85222A (2012); doi: 10.1117/12.964985
Event: SPIE Photomask Technology, 2012, Monterey, California, United States
Character projection (CP) exposure has some advantages compared with variable shaped beam (VSB) system; (1) shot count reduction by printing complex patterns in one e-beam shot, (2) high pattern fidelity by using CP stencil. In this paper we address another advantage of CP exposure, namely the shape correction of CP stencil for cancelling the pattern deformation on the substrate. The deformation of CP printings is decomposed into some elements. They are CP stencil manufacturing error, proximity effect, beam blur of the e-beam writer and resist blur. The element caused by beam blur of e-beam writer can be predicted by measuring the total beam blur obtained from CD-dose curves. The pattern deformation was corrected by applying the shape correction software system of D2S. The corrected CP stencil of 22nm-node standard cell was manufactured and standard cell patterns were exposed. We confirmed that our shape correction method is the appropriate solution for correcting deformation issue of CP openings. The beam blur required for the 1X nm dimensions was predicted from the exposure results of standard cell patterns with applying shape correction and CD-dose curves. We simulated the optical system to realize the required beam blur. As a result, the next electron optics has the resolving capability of 1X nm dimension.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiro Takizawa, Keita Bunya, Hideaki Isobe, Hideaki Komami, Kenji Abe, Masaki Kurokawa, Akio Yamada, Kiichi Sakamoto, Takayuki Nakamura, Kazusumi Kuwano, Masahiro Tateishi, Larry Chau, "Evaluation of CP shape correction for e-beam writing", Proc. SPIE 8522, Photomask Technology 2012, 85222A (8 November 2012); doi: 10.1117/12.964985; https://doi.org/10.1117/12.964985


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