We have investigated three manufacturing sites for a 28nm first-metal layer reticle. Two of them were manufactured with a comparable process using the same advanced reticle binary blank material. For the third site a different reticle blank material with a relatively thin absorber layer thickness was used which was made with a comparable reticle process. The optical proximity correction (OPC) test patterns were designed with two different dummy patterns. The CD differences of the three reticles will be demonstrated for different dummy pattern and will be discussed individually. All three reticles have been exposed and the respective wafer critical dimension through pitch (CDTP) and linearity performance is demonstrated. Also the line-end performance for two dimensional (2D) structures is shown for the three sites of the reticle. The wafer CD difference for CDTP, linearity, and 2D structures are also discussed.
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GuoXiang Ning, Christian Buergel, Paul Ackmann, Marc Staples, Thomas Thamm, Chin Teong Lim, Andre Leschok, Stefan Roling, Anthony Zhou, Fang Hong Gn, Frank Richter, "Reticle and Wafer CD Variation for Different Dummy Pattern," Proc. SPIE 8522, Photomask Technology 2012, 85222J (8 November 2012);