24 October 2012 Comparative analysis of high-performance infrared avalanche InxGa1-xAsyP1-y and Hg1-xCdxTe heterophotodiodes
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Abstract
Technology of infrared (IR) avalanche photodiodes (APDs) gradually moves from simple single element APD to 2D focal plane arrays (FPA). Spectral covering of APDs is expanded continuously from classic 1.3 μm to longer wavelengths due to using of narrow-gap semiconductor materials like Hg1-xCdxTe. APDs are of great interest to developers and manufacturers of different optical communication, measuring and 3D reconstruction thermal imaging systems. Major IR detector materials for manufacturing of high-performance APDs became heteroepitaxial structures InxGa1-xAsyP1-y and Hg1-xCdxTe. Progress in IR APD technology was achieved through serious improvement in material growing techniques enabling forming of multilayer heterostuctures with separate absorption and multiplication regions (SAM). Today SAM-APD design can be implemented both on InxGa1-xAsyP1-y and Hg1-xCdxTe multilayer heteroepitaxial structures. To create the best performance optimal design avalanche heterophotodiode (AHPD) it is necessary to carry out a detailed theoretical analysis of basic features of generation, avalanche breakdown and multiplication of charge carriers in proper heterostructure. Optimization of AHPD properties requires comprehensive estimation of AHPD’s pixel performance depending on pixel’s multi-layer structure design, layers doping, distribution of electric field in the structure and operating temperature. Objective of the present article is to compare some features of 1.55 μm SAM-AHPDs based on InxGa1-xAsyP1-y and Hg1-xCdxTe.
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Viacheslav Kholodnov, Albina Drugova, Mikhail Nikitin, Galina Chekanova, "Comparative analysis of high-performance infrared avalanche InxGa1-xAsyP1-y and Hg1-xCdxTe heterophotodiodes", Proc. SPIE 8541, Electro-Optical and Infrared Systems: Technology and Applications IX, 85411A (24 October 2012); doi: 10.1117/12.971213; https://doi.org/10.1117/12.971213
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