26 October 2012 Innovative monolithic detector for tri-spectral (THz, IR, Vis) imaging
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Proceedings Volume 8544, Millimetre Wave and Terahertz Sensors and Technology V; 85440F (2012); doi: 10.1117/12.974970
Event: SPIE Security + Defence, 2012, Edinburgh, United Kingdom
Abstract
Fusion of multispectral images has been explored for many years for security and used in a number of commercial products. CEA-Leti and FBK have developed an innovative sensor technology that gathers monolithically on a unique focal plane arrays, pixels sensitive to radiation in three spectral ranges that are terahertz (THz), infrared (IR) and visible. This technology benefits of many assets for volume market: compactness, full CMOS compatibility on 200mm wafers, advanced functions of the CMOS read-out integrated circuit (ROIC), and operation at room temperature. The ROIC houses visible APS diodes while IR and THz detections are carried out by microbolometers collectively processed above the CMOS substrate. Standard IR bolometric microbridges (160x160 pixels) are surrounding antenna-coupled bolometers (32X32 pixels) built on a resonant cavity customized to THz sensing. This paper presents the different technological challenges achieved in this development and first electrical and sensitivity experimental tests.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Pocas, M. Perenzoni, N. Massari, F. Simoens, J. Meilhan, W. Rabaud, S. Martin, B. Delplanque, P. Imperinetti, V. Goudon, C. Vialle, A. Arnaud, "Innovative monolithic detector for tri-spectral (THz, IR, Vis) imaging", Proc. SPIE 8544, Millimetre Wave and Terahertz Sensors and Technology V, 85440F (26 October 2012); doi: 10.1117/12.974970; https://doi.org/10.1117/12.974970
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KEYWORDS
Terahertz radiation

Bolometers

Infrared bolometers

Infrared radiation

Infrared imaging

Sensors

Semiconducting wafers

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