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PROCEEDINGS VOLUME 8549
16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES | 19-22 DECEMBER 2011
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar ; B. Mazhari ; Y N Mohapatra
IN THIS VOLUME
128 Sessions, 128 papers, 0 videos
Front Matter  (1)
Optoelectronics  (15)
Nanotechnology and Emerging Areas  (38)
MEMS and Sensors  (21)
High Frequency/Power Devices  (16)
Organic Electronics, Display and Lighting and General  (10)
VLSI and ULSI Technology  (4)
Device Modelling and Simulation  (15)
Photovoltaics  (9)
16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES
19-22 December 2011
Kanpur, India
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Front Matter
Front Matter: Volume 8549
Proc. SPIE 8549, Front Matter: Volume 8549, 854901(24 October 2012);doi: 10.1117/12.926917
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Optoelectronics
The simple theoretical analysis of the mass and molar magnetic susceptibilities in quantum wires of II-VI and IV-VI compound semiconductor
Proc. SPIE 8549, The simple theoretical analysis of the mass and molar magnetic susceptibilities in quantum wires of II-VI and IV-VI compound semiconductor, 85492K(15 October 2012);doi: 10.1117/12.922318
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Nanotechnology and Emerging Areas
Development and standardization of porous silicon for application as a working electrode in electrochemical immunosensor
Proc. SPIE 8549, Development and standardization of porous silicon for application as a working electrode in electrochemical immunosensor, 85491I(15 October 2012);doi: 10.1117/12.923196
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MEMS and Sensors
Design of Piezoresistive MEMS Absolute Pressure Sensor
Proc. SPIE 8549, Design of Piezoresistive MEMS Absolute Pressure Sensor, 85491G(15 October 2012);doi: 10.1117/12.923644
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High Frequency/Power Devices
Optimized shielded-gate trench MOSFET technology for high-frequency, high-efficiency power supplies
Proc. SPIE 8549, Optimized shielded-gate trench MOSFET technology for high-frequency, high-efficiency power supplies, 85490H(15 October 2012);doi: 10.1117/12.923768
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Nanotechnology and Emerging Areas
On the calculation of energy eigenstates of electrons in a spherical quantum dot
Proc. SPIE 8549, On the calculation of energy eigenstates of electrons in a spherical quantum dot, 85491J(15 October 2012);doi: 10.1117/12.923801
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Organic Electronics, Display and Lighting and General
Modeling of charge transport through thiophene nanowire
Proc. SPIE 8549, Modeling of charge transport through thiophene nanowire, 85492Z(15 October 2012);doi: 10.1117/12.924148
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MEMS and Sensors
stability study on ceramic mercuric iodide (red) X-ray sensor
Proc. SPIE 8549, stability study on ceramic mercuric iodide (red) X-ray sensor, 854910(15 October 2012);doi: 10.1117/12.924240
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Design of vertical packaging technology for RF MEMS switch
Proc. SPIE 8549, Design of vertical packaging technology for RF MEMS switch, 854911(15 October 2012);doi: 10.1117/12.924260
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Organic Electronics, Display and Lighting and General
Multi Emissive Layer Type White Organic Light Emitting Diode Based on Zinc Metal Complexes
Proc. SPIE 8549, Multi Emissive Layer Type White Organic Light Emitting Diode Based on Zinc Metal Complexes, 854930(15 October 2012);doi: 10.1117/12.924261
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Nanotechnology and Emerging Areas
Design and fabrication of carbon nano-structured flexible antenna
Proc. SPIE 8549, Design and fabrication of carbon nano-structured flexible antenna, 85491K(15 October 2012);doi: 10.1117/12.924267
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VLSI and ULSI Technology
Optical and Electrical Characterization of Atomic Layer Deposited (ALD) HfO2/p-GaAs MOS capacitors
Proc. SPIE 8549, Optical and Electrical Characterization of Atomic Layer Deposited (ALD) HfO2/p-GaAs MOS capacitors, 85493I(15 October 2012);doi: 10.1117/12.924341
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Characterization of silicide-silicon interface contact resistivity using 1-D dual transmission line model approximation of modified cross bridge kelvin measurements
Proc. SPIE 8549, Characterization of silicide-silicon interface contact resistivity using 1-D dual transmission line model approximation of modified cross bridge kelvin measurements, 85493J(15 October 2012);doi: 10.1117/12.924514
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Nanotechnology and Emerging Areas
Characterization of traps in SiGe:C channel heterojunction PMOSFETs
Proc. SPIE 8549, Characterization of traps in SiGe:C channel heterojunction PMOSFETs, 85491L(15 October 2012);doi: 10.1117/12.924516
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Optoelectronics
Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETs
Proc. SPIE 8549, Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETs, 85492L(15 October 2012);doi: 10.1117/12.924519
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Nanotechnology and Emerging Areas
Hydrogenated amorphous carbon films having embedded nanoparticles deposited by cathodic jet carbon arc technique
Proc. SPIE 8549, Hydrogenated amorphous carbon films having embedded nanoparticles deposited by cathodic jet carbon arc technique, 85491M(15 October 2012);doi: 10.1117/12.924629
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MEMS and Sensors
Low Temperature Tin Oxide (SnO2) Nanowire Gas Sensor
Proc. SPIE 8549, Low Temperature Tin Oxide (SnO2) Nanowire Gas Sensor, 854915(15 October 2012);doi: 10.1117/12.924698
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A Resistive Type Humidity Sensor Based on ZnO-SnO2 Nanocomposite
Proc. SPIE 8549, A Resistive Type Humidity Sensor Based on ZnO-SnO2 Nanocomposite, 854916(15 October 2012);doi: 10.1117/12.924796
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Nanotechnology and Emerging Areas
An analytical potential model for threshold voltage of DGMOSFET with consideration of mobile charges
Proc. SPIE 8549, An analytical potential model for threshold voltage of DGMOSFET with consideration of mobile charges, 85491N(15 October 2012);doi: 10.1117/12.924805
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Fabrication of graphene based field effect transistor with copper electrodes
Proc. SPIE 8549, Fabrication of graphene based field effect transistor with copper electrodes, 85491O(15 October 2012);doi: 10.1117/12.924958
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Optoelectronics
Optimization of ohmic contact for the fabrication of InGaN/GaN multiple quantum well blue LED
Proc. SPIE 8549, Optimization of ohmic contact for the fabrication of InGaN/GaN multiple quantum well blue LED, 85492M(15 October 2012);doi: 10.1117/12.924963
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Nanotechnology and Emerging Areas
Ozone/UV-light oxidation of multiwall carbon nanotubes (MWCNTs)
Proc. SPIE 8549, Ozone/UV-light oxidation of multiwall carbon nanotubes (MWCNTs), 85491P(15 October 2012);doi: 10.1117/12.924965
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Study of energy eigenvalues and density of states of carriers in a triangular quantum wire
Proc. SPIE 8549, Study of energy eigenvalues and density of states of carriers in a triangular quantum wire, 85491Q(15 October 2012);doi: 10.1117/12.924994
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Organic Electronics, Display and Lighting and General
Fabrication of Organic complementary inverter
Proc. SPIE 8549, Fabrication of Organic complementary inverter, 854931(15 October 2012);doi: 10.1117/12.925101
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Nanotechnology and Emerging Areas
Positioning of CNTs over the gold substrate via self-assembled monolayer functionalization using dip-pen Nanowriting
Proc. SPIE 8549, Positioning of CNTs over the gold substrate via self-assembled monolayer functionalization using dip-pen Nanowriting, 85491R(15 October 2012);doi: 10.1117/12.925104
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High Frequency/Power Devices
A comparative study of high frequency characteristics of SiC-based SDRs
Proc. SPIE 8549, A comparative study of high frequency characteristics of SiC-based SDRs, 85490I(15 October 2012);doi: 10.1117/12.925107
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MEMS and Sensors
Design aspects of electrostatically driven MEMS adaptive mirror
Proc. SPIE 8549, Design aspects of electrostatically driven MEMS adaptive mirror, 854917(15 October 2012);doi: 10.1117/12.925110
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Tunable MEMS Diffraction Gratings
Proc. SPIE 8549, Tunable MEMS Diffraction Gratings, 854918(15 October 2012);doi: 10.1117/12.925113
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Device Modelling and Simulation
Modeling the gain and bandwidth of submicron active layer n+-i-p+ avalanche photodiode
Proc. SPIE 8549, Modeling the gain and bandwidth of submicron active layer n+-i-p+ avalanche photodiode, 854902(15 October 2012);doi: 10.1117/12.925141
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MEMS and Sensors
Integration of MEMS with nanostructured metal-oxide materials for improved sensors for volatile organic compounds
Proc. SPIE 8549, Integration of MEMS with nanostructured metal-oxide materials for improved sensors for volatile organic compounds, 854919(15 October 2012);doi: 10.1117/12.925153
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Low Cost, Disposable Colorimetric Sensor for Quantitative Detection of Ammonia Gas
Proc. SPIE 8549, Low Cost, Disposable Colorimetric Sensor for Quantitative Detection of Ammonia Gas, 85491A(15 October 2012);doi: 10.1117/12.925176
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High Frequency/Power Devices
A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12)
Proc. SPIE 8549, A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12), 85490J(15 October 2012);doi: 10.1117/12.925195
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The influence of 175 MeV Nickel ion irradiation on the electrical characteristics of power transistors (HF13)
Proc. SPIE 8549, The influence of 175 MeV Nickel ion irradiation on the electrical characteristics of power transistors (HF13), 85490K(15 October 2012);doi: 10.1117/12.925199
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MEMS and Sensors
MEMS Deformable Mirrors: Technology and Applications
Proc. SPIE 8549, MEMS Deformable Mirrors: Technology and Applications, 85491B(15 October 2012);doi: 10.1117/12.925268
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Organic Electronics, Display and Lighting and General
Origin and characterization of traps in organic semiconductor thin films
Proc. SPIE 8549, Origin and characterization of traps in organic semiconductor thin films, 854932(15 October 2012);doi: 10.1117/12.925269
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Optoelectronics
Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector
Proc. SPIE 8549, Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector, 85492N(15 October 2012);doi: 10.1117/12.925284
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Nanotechnology and Emerging Areas
AC conductivity and dielectric studies on nickel ferrite nano-particles synthesized by sol gel technique
Proc. SPIE 8549, AC conductivity and dielectric studies on nickel ferrite nano-particles synthesized by sol gel technique, 85491S(15 October 2012);doi: 10.1117/12.925306
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MEMS and Sensors
Design and simulation of Pt-based microhotplate, and fabrication of suspended dielectric membrane by bulk micromachining
Proc. SPIE 8549, Design and simulation of Pt-based microhotplate, and fabrication of suspended dielectric membrane by bulk micromachining, 85491C(15 October 2012);doi: 10.1117/12.925318
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Device Modelling and Simulation
A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT
Proc. SPIE 8549, A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT, 854903(15 October 2012);doi: 10.1117/12.925320
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Nanotechnology and Emerging Areas
Diffusion thermopower in graphene nanoribbons: effect of subbands
Proc. SPIE 8549, Diffusion thermopower in graphene nanoribbons: effect of subbands, 85491T(15 October 2012);doi: 10.1117/12.925330
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Optoelectronics
Effect of Pulse Parameter and Dark Count Probability on the Performance of a gated mode Single Photon Avalanche Detector
Proc. SPIE 8549, Effect of Pulse Parameter and Dark Count Probability on the Performance of a gated mode Single Photon Avalanche Detector, 85492O(15 October 2012);doi: 10.1117/12.925337
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Device Modelling and Simulation
Semi-Analytical Estimation of Intra-Die Variations of Analog Performances of Nano-scale nMOS Transistor
Proc. SPIE 8549, Semi-Analytical Estimation of Intra-Die Variations of Analog Performances of Nano-scale nMOS Transistor, 854904(15 October 2012);doi: 10.1117/12.925339
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Photovoltaics
Effect of Capture and Escape Rates of Carriers and Well Parameters on the Performance of Multi-Quantum Well Solar Cell
Proc. SPIE 8549, Effect of Capture and Escape Rates of Carriers and Well Parameters on the Performance of Multi-Quantum Well Solar Cell, 854939(15 October 2012);doi: 10.1117/12.925342
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Nanotechnology and Emerging Areas
Diffusion thermopower in suspended graphene
Proc. SPIE 8549, Diffusion thermopower in suspended graphene, 85491U(15 October 2012);doi: 10.1117/12.925343
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MEMS and Sensors
Design and mathematical model of a ZnO-based MEMS acoustic sensor
Proc. SPIE 8549, Design and mathematical model of a ZnO-based MEMS acoustic sensor, 85491D(15 October 2012);doi: 10.1117/12.925523
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Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices
Proc. SPIE 8549, Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices, 85491E(15 October 2012);doi: 10.1117/12.925526
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High Frequency/Power Devices
Cl2/Ar based Inductively Coupled Plasma Etching of GaN/AlGaN Structure
Proc. SPIE 8549, Cl2/Ar based Inductively Coupled Plasma Etching of GaN/AlGaN Structure, 85490L(15 October 2012);doi: 10.1117/12.925529
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Device Modelling and Simulation
Digital Circuit Analysis of Insulated Shallow Extension Silicon On Void (ISESOV) FET for Low Voltage Applications
Proc. SPIE 8549, Digital Circuit Analysis of Insulated Shallow Extension Silicon On Void (ISESOV) FET for Low Voltage Applications, 854905(15 October 2012);doi: 10.1117/12.925533
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An Analytical Modeling Approach for a Gate All Around (GAA) Tunnel Field Effect Transistor (TFET)
Proc. SPIE 8549, An Analytical Modeling Approach for a Gate All Around (GAA) Tunnel Field Effect Transistor (TFET), 854906(15 October 2012);doi: 10.1117/12.925534
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Photovoltaics
Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application
Proc. SPIE 8549, Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application, 85493A(15 October 2012);doi: 10.1117/12.925536
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MEMS and Sensors
Design and Simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications
Proc. SPIE 8549, Design and Simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications, 85491F(15 October 2012);doi: 10.1117/12.925703
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Nanotechnology and Emerging Areas
Effects of Size Nonuniformity on the Optical Transitions in a set of Realistic InxGa1-xN/GaN Quantum Dots, having a Gaussian Distribution
Proc. SPIE 8549, Effects of Size Nonuniformity on the Optical Transitions in a set of Realistic InxGa1-xN/GaN Quantum Dots, having a Gaussian Distribution, 85491V(15 October 2012);doi: 10.1117/12.925882
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Device Modelling and Simulation
The impact of Process-Induced Mechanical Stress on Multi-Fingered Device Performance
Proc. SPIE 8549, The impact of Process-Induced Mechanical Stress on Multi-Fingered Device Performance, 854907(15 October 2012);doi: 10.1117/12.925972
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MEMS and Sensors
FEM Simulation of CMUT Cell for NDT Application
Proc. SPIE 8549, FEM Simulation of CMUT Cell for NDT Application, 85491H(15 October 2012);doi: 10.1117/12.926046
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High Frequency/Power Devices
60 and 100 MeV oxygen ion irradiation effects on electrical characteristics of bipolar transistor
Proc. SPIE 8549, 60 and 100 MeV oxygen ion irradiation effects on electrical characteristics of bipolar transistor, 85490M(15 October 2012);doi: 10.1117/12.926278
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Device Modelling and Simulation
Impact of Ge Profile on The Performance of PNP SiGe HBT on Thin Film SOI
Proc. SPIE 8549, Impact of Ge Profile on The Performance of PNP SiGe HBT on Thin Film SOI, 854908(15 October 2012);doi: 10.1117/12.926345
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Optoelectronics
Bloch wave analysis for optical band structure of III-nitrides photonic crystals
Proc. SPIE 8549, Bloch wave analysis for optical band structure of III-nitrides photonic crystals, 85492P(15 October 2012);doi: 10.1117/12.926762
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Nanotechnology and Emerging Areas
Physical and Optical Properties of CuBO2 Nanopowders Synthesized via Sol-gel Route
Proc. SPIE 8549, Physical and Optical Properties of CuBO2 Nanopowders Synthesized via Sol-gel Route, 85491W(15 October 2012);doi: 10.1117/12.926776
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MEMS and Sensors
Electrical characterization of γ-Al2O3 thin film parallel plate capacitive sensor for trace moisture detection
Proc. SPIE 8549, Electrical characterization of γ-Al2O3 thin film parallel plate capacitive sensor for trace moisture detection, 85490X(15 October 2012);doi: 10.1117/12.926779
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Organic Electronics, Display and Lighting and General
Electrical Testing of the OLED Matrix for Analyzing Defects in a PMOLED Display
Proc. SPIE 8549, Electrical Testing of the OLED Matrix for Analyzing Defects in a PMOLED Display, 854937(15 October 2012);doi: 10.1117/12.926781
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Nanotechnology and Emerging Areas
Optimization of cross-sectional aspect ratio of ballistic Si nanobar MOSFETs for superior current-voltage characteristics
Proc. SPIE 8549, Optimization of cross-sectional aspect ratio of ballistic Si nanobar MOSFETs for superior current-voltage characteristics, 85491X(15 October 2012);doi: 10.1117/12.926784
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