PROCEEDINGS VOLUME 8549
16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES | 19-22 DECEMBER 2011
16th International Workshop on Physics of Semiconductor Devices
16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES
19-22 December 2011
Kanpur, India
Front Matter
Proc. SPIE 8549, Front Matter: Volume 8549, 854901(24 October 2012);doi: 10.1117/12.926917
Optoelectronics
Proc. SPIE 8549, The simple theoretical analysis of the mass and molar magnetic susceptibilities in quantum wires of II-VI and IV-VI compound semiconductor, 85492K(15 October 2012);doi: 10.1117/12.922318
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Development and standardization of porous silicon for application as a working electrode in electrochemical immunosensor, 85491I(15 October 2012);doi: 10.1117/12.923196
MEMS and Sensors
Proc. SPIE 8549, Design of Piezoresistive MEMS Absolute Pressure Sensor, 85491G(15 October 2012);doi: 10.1117/12.923644
High Frequency/Power Devices
Proc. SPIE 8549, Optimized shielded-gate trench MOSFET technology for high-frequency, high-efficiency power supplies, 85490H(15 October 2012);doi: 10.1117/12.923768
Nanotechnology and Emerging Areas
Proc. SPIE 8549, On the calculation of energy eigenstates of electrons in a spherical quantum dot, 85491J(15 October 2012);doi: 10.1117/12.923801
Organic Electronics, Display and Lighting and General
Proc. SPIE 8549, Modeling of charge transport through thiophene nanowire, 85492Z(15 October 2012);doi: 10.1117/12.924148
MEMS and Sensors
Proc. SPIE 8549, stability study on ceramic mercuric iodide (red) X-ray sensor, 854910(15 October 2012);doi: 10.1117/12.924240
Proc. SPIE 8549, Design of vertical packaging technology for RF MEMS switch, 854911(15 October 2012);doi: 10.1117/12.924260
Organic Electronics, Display and Lighting and General
Proc. SPIE 8549, Multi Emissive Layer Type White Organic Light Emitting Diode Based on Zinc Metal Complexes, 854930(15 October 2012);doi: 10.1117/12.924261
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Design and fabrication of carbon nano-structured flexible antenna, 85491K(15 October 2012);doi: 10.1117/12.924267
VLSI and ULSI Technology
Proc. SPIE 8549, Optical and Electrical Characterization of Atomic Layer Deposited (ALD) HfO2/p-GaAs MOS capacitors, 85493I(15 October 2012);doi: 10.1117/12.924341
Proc. SPIE 8549, Characterization of silicide-silicon interface contact resistivity using 1-D dual transmission line model approximation of modified cross bridge kelvin measurements, 85493J(15 October 2012);doi: 10.1117/12.924514
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Characterization of traps in SiGe:C channel heterojunction PMOSFETs, 85491L(15 October 2012);doi: 10.1117/12.924516
Optoelectronics
Proc. SPIE 8549, Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETs, 85492L(15 October 2012);doi: 10.1117/12.924519
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Hydrogenated amorphous carbon films having embedded nanoparticles deposited by cathodic jet carbon arc technique, 85491M(15 October 2012);doi: 10.1117/12.924629
MEMS and Sensors
Proc. SPIE 8549, Low Temperature Tin Oxide (SnO2) Nanowire Gas Sensor, 854915(15 October 2012);doi: 10.1117/12.924698
Proc. SPIE 8549, A Resistive Type Humidity Sensor Based on ZnO-SnO2 Nanocomposite, 854916(15 October 2012);doi: 10.1117/12.924796
Nanotechnology and Emerging Areas
Proc. SPIE 8549, An analytical potential model for threshold voltage of DGMOSFET with consideration of mobile charges, 85491N(15 October 2012);doi: 10.1117/12.924805
Proc. SPIE 8549, Fabrication of graphene based field effect transistor with copper electrodes, 85491O(15 October 2012);doi: 10.1117/12.924958
Optoelectronics
Proc. SPIE 8549, Optimization of ohmic contact for the fabrication of InGaN/GaN multiple quantum well blue LED, 85492M(15 October 2012);doi: 10.1117/12.924963
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Ozone/UV-light oxidation of multiwall carbon nanotubes (MWCNTs), 85491P(15 October 2012);doi: 10.1117/12.924965
Proc. SPIE 8549, Study of energy eigenvalues and density of states of carriers in a triangular quantum wire, 85491Q(15 October 2012);doi: 10.1117/12.924994
Organic Electronics, Display and Lighting and General
Proc. SPIE 8549, Fabrication of Organic complementary inverter, 854931(15 October 2012);doi: 10.1117/12.925101
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Positioning of CNTs over the gold substrate via self-assembled monolayer functionalization using dip-pen Nanowriting, 85491R(15 October 2012);doi: 10.1117/12.925104
High Frequency/Power Devices
Proc. SPIE 8549, A comparative study of high frequency characteristics of SiC-based SDRs, 85490I(15 October 2012);doi: 10.1117/12.925107
MEMS and Sensors
Proc. SPIE 8549, Design aspects of electrostatically driven MEMS adaptive mirror, 854917(15 October 2012);doi: 10.1117/12.925110
Proc. SPIE 8549, Tunable MEMS Diffraction Gratings, 854918(15 October 2012);doi: 10.1117/12.925113
Device Modelling and Simulation
Proc. SPIE 8549, Modeling the gain and bandwidth of submicron active layer n+-i-p+ avalanche photodiode, 854902(15 October 2012);doi: 10.1117/12.925141
MEMS and Sensors
Proc. SPIE 8549, Integration of MEMS with nanostructured metal-oxide materials for improved sensors for volatile organic compounds, 854919(15 October 2012);doi: 10.1117/12.925153
Proc. SPIE 8549, Low Cost, Disposable Colorimetric Sensor for Quantitative Detection of Ammonia Gas, 85491A(15 October 2012);doi: 10.1117/12.925176
High Frequency/Power Devices
Proc. SPIE 8549, A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12), 85490J(15 October 2012);doi: 10.1117/12.925195
Proc. SPIE 8549, The influence of 175 MeV Nickel ion irradiation on the electrical characteristics of power transistors (HF13), 85490K(15 October 2012);doi: 10.1117/12.925199
MEMS and Sensors
Proc. SPIE 8549, MEMS Deformable Mirrors: Technology and Applications, 85491B(15 October 2012);doi: 10.1117/12.925268
Organic Electronics, Display and Lighting and General
Proc. SPIE 8549, Origin and characterization of traps in organic semiconductor thin films, 854932(15 October 2012);doi: 10.1117/12.925269
Optoelectronics
Proc. SPIE 8549, Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector, 85492N(15 October 2012);doi: 10.1117/12.925284
Nanotechnology and Emerging Areas
Proc. SPIE 8549, AC conductivity and dielectric studies on nickel ferrite nano-particles synthesized by sol gel technique, 85491S(15 October 2012);doi: 10.1117/12.925306
MEMS and Sensors
Proc. SPIE 8549, Design and simulation of Pt-based microhotplate, and fabrication of suspended dielectric membrane by bulk micromachining, 85491C(15 October 2012);doi: 10.1117/12.925318
Device Modelling and Simulation
Proc. SPIE 8549, A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT, 854903(15 October 2012);doi: 10.1117/12.925320
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Diffusion thermopower in graphene nanoribbons: effect of subbands, 85491T(15 October 2012);doi: 10.1117/12.925330
Optoelectronics
Proc. SPIE 8549, Effect of Pulse Parameter and Dark Count Probability on the Performance of a gated mode Single Photon Avalanche Detector, 85492O(15 October 2012);doi: 10.1117/12.925337
Device Modelling and Simulation
Proc. SPIE 8549, Semi-Analytical Estimation of Intra-Die Variations of Analog Performances of Nano-scale nMOS Transistor, 854904(15 October 2012);doi: 10.1117/12.925339
Photovoltaics
Proc. SPIE 8549, Effect of Capture and Escape Rates of Carriers and Well Parameters on the Performance of Multi-Quantum Well Solar Cell, 854939(15 October 2012);doi: 10.1117/12.925342
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Diffusion thermopower in suspended graphene, 85491U(15 October 2012);doi: 10.1117/12.925343
MEMS and Sensors
Proc. SPIE 8549, Design and mathematical model of a ZnO-based MEMS acoustic sensor, 85491D(15 October 2012);doi: 10.1117/12.925523
Proc. SPIE 8549, Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices, 85491E(15 October 2012);doi: 10.1117/12.925526
High Frequency/Power Devices
Proc. SPIE 8549, Cl2/Ar based Inductively Coupled Plasma Etching of GaN/AlGaN Structure, 85490L(15 October 2012);doi: 10.1117/12.925529
Device Modelling and Simulation
Proc. SPIE 8549, Digital Circuit Analysis of Insulated Shallow Extension Silicon On Void (ISESOV) FET for Low Voltage Applications, 854905(15 October 2012);doi: 10.1117/12.925533
Proc. SPIE 8549, An Analytical Modeling Approach for a Gate All Around (GAA) Tunnel Field Effect Transistor (TFET), 854906(15 October 2012);doi: 10.1117/12.925534
Photovoltaics
Proc. SPIE 8549, Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application, 85493A(15 October 2012);doi: 10.1117/12.925536
MEMS and Sensors
Proc. SPIE 8549, Design and Simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications, 85491F(15 October 2012);doi: 10.1117/12.925703
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Effects of Size Nonuniformity on the Optical Transitions in a set of Realistic InxGa1-xN/GaN Quantum Dots, having a Gaussian Distribution, 85491V(15 October 2012);doi: 10.1117/12.925882
Device Modelling and Simulation
Proc. SPIE 8549, The impact of Process-Induced Mechanical Stress on Multi-Fingered Device Performance, 854907(15 October 2012);doi: 10.1117/12.925972
MEMS and Sensors
Proc. SPIE 8549, FEM Simulation of CMUT Cell for NDT Application, 85491H(15 October 2012);doi: 10.1117/12.926046
High Frequency/Power Devices
Proc. SPIE 8549, 60 and 100 MeV oxygen ion irradiation effects on electrical characteristics of bipolar transistor, 85490M(15 October 2012);doi: 10.1117/12.926278
Device Modelling and Simulation
Proc. SPIE 8549, Impact of Ge Profile on The Performance of PNP SiGe HBT on Thin Film SOI, 854908(15 October 2012);doi: 10.1117/12.926345
Optoelectronics
Proc. SPIE 8549, Bloch wave analysis for optical band structure of III-nitrides photonic crystals, 85492P(15 October 2012);doi: 10.1117/12.926762
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Physical and Optical Properties of CuBO2 Nanopowders Synthesized via Sol-gel Route, 85491W(15 October 2012);doi: 10.1117/12.926776
MEMS and Sensors
Proc. SPIE 8549, Electrical characterization of γ-Al2O3 thin film parallel plate capacitive sensor for trace moisture detection, 85490X(15 October 2012);doi: 10.1117/12.926779
Organic Electronics, Display and Lighting and General
Proc. SPIE 8549, Electrical Testing of the OLED Matrix for Analyzing Defects in a PMOLED Display, 854937(15 October 2012);doi: 10.1117/12.926781
Nanotechnology and Emerging Areas
Proc. SPIE 8549, Optimization of cross-sectional aspect ratio of ballistic Si nanobar MOSFETs for superior current-voltage characteristics, 85491X(15 October 2012);doi: 10.1117/12.926784