15 October 2012 Modeling the gain and bandwidth of submicron active layer n+-i-p+ avalanche photodiode
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854902 (2012); doi: 10.1117/12.925141
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
The electron initiated avalanche gain and bandwidth are calculated for thin submicron GaAs n+-i-p+ avalanche photodiode. A model is used to estimate the avalanche build-up of carriers in the active multiplication layer considering the dead-space effect. In the model, the carriers are identified both by their energy and position in the multiplication region. The excess energy of the carriers above threshold is assumed to be equally distributed among the carriers generated after impact ionization. The gain versus bias and bandwidth versus gain characteristics of the device are also demonstrated for different active layer thicknesses of the APD.
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Kanishka Majumder, N. R. Das, "Modeling the gain and bandwidth of submicron active layer n+-i-p+ avalanche photodiode", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854902 (15 October 2012); doi: 10.1117/12.925141; http://dx.doi.org/10.1117/12.925141
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KEYWORDS
Avalanche photodetectors

Ionization

Gallium arsenide

Data modeling

Avalanche photodiodes

FDA class I medical device development

FDA class II medical device development

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