15 October 2012 A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854903 (2012); doi: 10.1117/12.925320
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
A comprehensive charge control based analytical noise model for a symmetric tied gate 100nm gate-length In0.52Al0.48As/In0.53Ga0.47As DG-HEMT has been presented in this paper. The model evaluates the mean square drain noise current and gate noise current and the P, R & C noise coefficients for the device. The effect of the doping concentration and thickness of the donor-layer on the noise coefficients and hence on the overall noise performance of the device are also studied.
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Monika Bhattacharya, Jyotika Jogi, R. S. Gupta, Mridula Gupta, "A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854903 (15 October 2012); doi: 10.1117/12.925320; http://dx.doi.org/10.1117/12.925320
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KEYWORDS
Doping

Neodymium

Interference (communication)

Instrument modeling

Control systems

Analytical research

Diffusion

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