15 October 2012 Impact of Ge profile on the performance of PNP SiGe HBT on thin film SOI
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854908 (2012) https://doi.org/10.1117/12.926345
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
The pnp SiGe HBT on thin film SOI is investigated with different Ge profiles using 2D numerical simulations in MEDICI. The base current, collector current, DC current gain, AC voltage gain, unity current gain frequency and breakdown voltage is obtained for a 0.09 × 1.0 μm2 pnp SiGe HBT with triangular (0%-30%), trapezoidal (10%- 20%) and box (15%) Ge profiles in the base layer. The results obtained with the Ge profiles, has been analyzed and compared. The Ft BVCEO product for triangular, trapezoidal and box Ge profiles has been found as 190.8, 401, and 359.6 GHzV respectively. The tradeoff between voltage gain and unity current gain frequency for the Ge profiles has been analyzed. The simulation result suggests that the pnp SiGe HBT on thin film SOI with trapezoidal Ge profile is a potential candidate for the high speed complementary bipolar circuits that can be used in high performance mixed signal applications.
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Prasanna Kumar Misra, Prasanna Kumar Misra, S. Qureshi, S. Qureshi, } "Impact of Ge profile on the performance of PNP SiGe HBT on thin film SOI", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854908 (15 October 2012); doi: 10.1117/12.926345; https://doi.org/10.1117/12.926345
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