15 October 2012 A comparative study of high frequency characteristics of SiC-based SDRs
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490I (2012) https://doi.org/10.1117/12.925107
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
A model is developed to study SiC-based IMPATTs to operate at D-band frequency and the device properties of 3C, 4H, 6H-SiC based SDR IMPATTs are compared at the same operating conditions and frequency of operations. A noise analysis model is also developed to compare the noise characteristics of 3C, 4H and 6H SiC-based SDR IMPATTs. The results show that 3C-SiC based SDR IMPATTs have better power delivery capability whereas 4H SiC-based SDR IMPATTs are less noisy. When a power noise tradeoff consider, it is seen that 4H SiC-based SDR IMPATTs have better Noise Measure than the other two polytypes. These results can be used as the first hand information by the experimentalist.
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R. K. Parida, R. K. Parida, A. K. Panda, A. K. Panda, G. N. Dash, G. N. Dash, } "A comparative study of high frequency characteristics of SiC-based SDRs", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490I (15 October 2012); doi: 10.1117/12.925107; https://doi.org/10.1117/12.925107
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