15 October 2012 A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12)
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490J (2012) https://doi.org/10.1117/12.925195
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
We have investigated the total dose effects of 100 MeV Oxygen ion irradiation on the dc electrical characteristics of Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). The results of oxygen ion irradiation were compared with Co-60 gamma irradiation in the same total dose range (1 Mrad to 100 Mrad). The results show that even after 100 Mrad of total dose, the degradation in the electrical characteristics of SiGe HBT is acceptable from the circuit design point of view.
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K. C. Praveen, K. C. Praveen, N. Pushpa, N. Pushpa, Ambuj Tripathi, Ambuj Tripathi, D. Revannasiddaiah, D. Revannasiddaiah, P. S. Naik, P. S. Naik, John D. Cressler, John D. Cressler, A. P. Gnana Prakash, A. P. Gnana Prakash, } "A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12)", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490J (15 October 2012); doi: 10.1117/12.925195; https://doi.org/10.1117/12.925195
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