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The dc electrical characteristics of NPN RF
power transistors were studied systematically before and
after 175 MeV Ni13+ ion and Co-60 gamma irradiation in
the dose range from 100 krad to 100 Mrad. The transistor
parameters such as excess base current (ΔIB= IBpost-IBpre),
dc current gain (hFE), and collector-saturation current
(ICSat) were studied. The base current (IB) was found to
increase significantly after irradiation and this in turn
decreases the hFE of the transistors. Further, the output
characteristics of the irradiated devices exhibit the
decrease in the collector current at the saturation region
(ICSat) with increase of radiation dose.
N. Pushpa,K. C. Praveen,A. P. Gnana Prakash,P. S. Naik,S. K. Gupta, andD. Revannasiddaiah
"The influence of 175 MeV nickel ion irradiation on the electrical characteristics of power transistors (HF13)", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490K (15 October 2012); https://doi.org/10.1117/12.925199
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N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, P. S. Naik, S. K. Gupta, D. Revannasiddaiah, "The influence of 175 MeV Nickel ion irradiation on the electrical characteristics of power transistors (HF13)," Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490K (15 October 2012); https://doi.org/10.1117/12.925199