15 October 2012 The influence of 175 MeV nickel ion irradiation on the electrical characteristics of power transistors (HF13)
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490K (2012); doi: 10.1117/12.925199
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
The dc electrical characteristics of NPN RF power transistors were studied systematically before and after 175 MeV Ni13+ ion and Co-60 gamma irradiation in the dose range from 100 krad to 100 Mrad. The transistor parameters such as excess base current (ΔIB= IBpost-IBpre), dc current gain (hFE), and collector-saturation current (ICSat) were studied. The base current (IB) was found to increase significantly after irradiation and this in turn decreases the hFE of the transistors. Further, the output characteristics of the irradiated devices exhibit the decrease in the collector current at the saturation region (ICSat) with increase of radiation dose.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Pushpa, K. C. Praveen, A. P. Gnana Prakash, P. S. Naik, S. K. Gupta, D. Revannasiddaiah, "The influence of 175 MeV nickel ion irradiation on the electrical characteristics of power transistors (HF13)", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490K (15 October 2012); doi: 10.1117/12.925199; http://dx.doi.org/10.1117/12.925199
PROCEEDINGS
3 PAGES


SHARE
KEYWORDS
Ions

Transistors

Nickel

Gamma radiation

Semiconductors

Physics

Silicon

Back to Top