15 October 2012 Design, fabrication and measurement of sub 1 dB noise figure LNA
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490O (2012) https://doi.org/10.1117/12.926869
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Amplification is one of the most basic and prevalent RF/Microwave circuit functions. This paper describes the design of an MIC(microwave integrated circuit) LNA(low noise amplifier) using PHEMT(Pseudomorphic High Electron Mobility Transistor) ATF-36077 in the frequency band 4.8 to 5.2 GHz The amplifier is designed using the Agilent’s ADS (Advanced Design System). The software was used to do minimum noise matching for the input stage and matching for maximum gain for the second stage. ADS has been used to design the input and output matching networks. A completed design of the amplifier was further optimized. The layout generated by the software was used to fabricate the amplifier. Momentum analysis of all the transmission lines and stubs used in the design was carried out to take into account the parasitic effects. Also, the method for the measurement of sub 1 dB noise figure is described for accurate measurement of noise figure. The LNA has demonstrated gain of 23.4 dB and noise figure 0.8-1.1 dB in the desired frequency band.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sanjay Kumar Tomar, Meena Mishra, Ashok Kumar, HariShankar Sharma, B. K. Sehgal, "Design, fabrication and measurement of sub 1 dB noise figure LNA", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490O (15 October 2012); doi: 10.1117/12.926869; https://doi.org/10.1117/12.926869
PROCEEDINGS
3 PAGES


SHARE
Back to Top