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15 October 2012 Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristics
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490P (2012) https://doi.org/10.1117/12.926955
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
A recent report on realization/studies of Si-SiC hetero junction has given impetus to explore them for generation of rf power in double drift impact ionization avalanche transit time (IMPATT) mode. MM-wave properties of this hetero junction are compared with corresponding Si and SiC homo .junction. Interesting feature of ionization free n-SiC zone localizes the avalanche zone to less than 10% of depletion zone resulting in diode efficiency around 27% (against only 10-15% for both homo junctions Si and SiC) and three fold high rf negative resistance, which can be therefore termed as promising high rf power source.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. P. Pati, P. R. Tripathy, S. K. Choudhury, M. Mukharjee, and P. Purohit "Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristics", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490P (15 October 2012); https://doi.org/10.1117/12.926955
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