15 October 2012 Scattering analysis of 2DEG in AlGaN/GaN heterostructure grown on Fe doped GaN template
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490Q (2012); doi: 10.1117/12.926974
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Electron transport properties of the 2-dimensional electron gas (2DEG) in Al0.3Ga0.7 N/AlN/GaN High Electron Mobility Transistor (HEMT) grown on Fe doped GaN template was investigated (a) experimentally using temperature dependent Hall measurements and (b) theoretically by taking into consideration different electron scattering mechanisms like polar optical phonon, dislocation and interface roughness scattering etc. The HEMT structure exhibited very high electron mobilities ~1700 cm2 /V s at room temperature and 13800 cm2 /V s at 30 K with a 2DEG density of ~1.1E13/cm2. From the comparison of theoretical and experimental data, it is shown that interface roughness scattering limits the mobility at low temperature where as the high temperature mobility is limited by Polar Optical phonon scattering.
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Rajesh K Bag, R. Tyagi, P. Mohan, K. Narang, Sudeep Verma, R. Muralidharan, "Scattering analysis of 2DEG in AlGaN/GaN heterostructure grown on Fe doped GaN template", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490Q (15 October 2012); doi: 10.1117/12.926974; https://doi.org/10.1117/12.926974
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KEYWORDS
Scattering

Gallium nitride

Interfaces

Phonons

Field effect transistors

Iron

Acoustics

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