15 October 2012 Theoretical study of drain current of AlInN/GaN HEMTs on SiC substrate
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490S (2012) https://doi.org/10.1117/12.927259
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
A new heterostructure based on AlxIn1-xN/GaN high electron mobility transistor (HEMT) on SiC substrate has been proposed for high frequency, where it offers the best performance in comparison to other two heterostructures like on AlxGa1-xN/GaN and InxGa1-xN/GaN. We have investigated the effect of different higher output characteristics in comparison to conventional AlxGa1-xN/GaN and InxGa1-xN/GaN with the AlxIn1-xN/GaN heterostructure, where the drain current is maximum for AlxIn1-xN/GaN and AlxGa1-xN/GaN heterostructure HEMT respectively for the same barrier thickness and for the same gate source voltage.
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Md. Iqbal Hossain, Md. Iqbal Hossain, Khandakar Nusrat Islam, Khandakar Nusrat Islam, Chandan Qumar Howlader, Chandan Qumar Howlader, Zahid Hasan Mahmood, Zahid Hasan Mahmood, } "Theoretical study of drain current of AlInN/GaN HEMTs on SiC substrate", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490S (15 October 2012); doi: 10.1117/12.927259; https://doi.org/10.1117/12.927259
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