15 October 2012 New generation MOSFET design for battery powered portable applications
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490T (2012) https://doi.org/10.1117/12.927361
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
This article reviews some of challenges that the Power MOSFET designers need to address to meet the ever growing market demand for reducing power consumption in battery-powered portable applications. The critical power MOSFET design parameters such as threshold voltage (Vth), drain-source breakdown voltage (BVdss), on-resistance (Rdson), package footprint, gate-drive voltage, and Figure of Merit (FOM) have been discussed. It has been highlighted that the scaling features and ultra-low on-resistance of the Trench Power MOSFETs can be advantageously utilized for powerloss management. The MOSFET design requirements in battery protection circuits and load switches have been presented. It has been emphasized that the Power MOSFET designers need to trade-off between on-resistance and maximum current capability in smaller footprint packages. The merits of Wafer Level Chip Scale Package (WLCSP) in achieving minimum foot print, ultra-low on-resistance, and improved thermal characteristics have been discussed.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sukhendu Deb Roy, Ritu Sodhi, Steven Sapp, "New generation MOSFET design for battery powered portable applications", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490T (15 October 2012); doi: 10.1117/12.927361; https://doi.org/10.1117/12.927361
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Performance evaluation of a high power DC DC boost converter...
Proceedings of SPIE (September 19 2016)
Electrical properties of carbon nanotube FETs
Proceedings of SPIE (September 04 2008)
Electron-beam-activated diamond switch experiments
Proceedings of SPIE (June 09 1993)
High Transconductance OGFETs
Proceedings of SPIE (April 22 1987)
Electron-Beam Controlled Semiconductor Switches
Proceedings of SPIE (April 06 1988)

Back to Top