15 October 2012 An improved SOI MESFET with triple-recessed drift region for electrical performance improvement
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490U (2012) https://doi.org/10.1117/12.927400
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
In this paper, a novel SOI MESFET with triple-recessed source drain drift region is proposed and its DC and RF characteristics are investigated in detail. The results show that the breakdown voltage, output power density, and current gain improved significantly. So the proposed structure which has superior electrical performances can be used as a high speed and high power device.
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Ali A. Orouji, Ali A. Orouji, Masoomeh Ghasemian, Masoomeh Ghasemian, Amirhossein Aminbeidokhti, Amirhossein Aminbeidokhti, Soude Rahmaninezhad, Soude Rahmaninezhad, } "An improved SOI MESFET with triple-recessed drift region for electrical performance improvement", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490U (15 October 2012); doi: 10.1117/12.927400; https://doi.org/10.1117/12.927400
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