15 October 2012 Large-signal modeling of hexagonal (4H-) SiC based double drift transit time device as high-power MM-wave source at W-band window frequency
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490V (2012) https://doi.org/10.1117/12.927420
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Full-scale, non-linear large-signal model of IV-IV SiC Double-Drift IMPATT diode with general doping profile is derived. This model, for the first time, has been used to analyze large-signal characteristics of SiC-IMPATTs at 94 GHz of MM-wave window frequency. Under small-voltage modulation (~ 2%, i.e. small-signal condition) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode’s negative conductance (5x106 Sm-2), susceptance (104.0 ×106 Sm-2), breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94.0 GHz) are obtained at modulation amplitude ~ 50% of DC breakdown voltage, for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (< 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all type of IMPATT structures with distributed and narrow avalanche zones. The simulation is made more realistic by incorporating the diffusion effects, space-chare effects and the realistic field and temperature dependent material parameters in SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form.
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Moumita Mukherjee, Diptadip Chakraborty, "Large-signal modeling of hexagonal (4H-) SiC based double drift transit time device as high-power MM-wave source at W-band window frequency", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490V (15 October 2012); doi: 10.1117/12.927420; https://doi.org/10.1117/12.927420
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