15 October 2012 Design and mathematical model of a ZnO-based MEMS acoustic sensor
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491D (2012) https://doi.org/10.1117/12.925523
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
The paper presents the design and mathematical model of a ZnO-based MEMS acoustic sensor. The structure consists with a 3.0 μm thick piezoelectric ZnO layer sandwiched between a pair of aluminum electrodes on a 30 μm thick silicon diaphragm. The size of silicon diaphragm is 3.1 x 3.1 mm2. Resonance frequency of the structure is determined using harmonic analysis by ANSYS and found to be 41.8 KHz. Sensitivity of acoustic sensor with and without the effect of residual stress are obtained as 334.7μV/Pa and 221.6μV/Pa respectively. The proposed model of the acoustic sensor operated over a wide frequency range from 30 Hz to 8 kHz.
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Mahanth Prasad, Mahanth Prasad, R. P. Yadav, R. P. Yadav, V. Sahula, V. Sahula, V. K. Khanna, V. K. Khanna, } "Design and mathematical model of a ZnO-based MEMS acoustic sensor", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491D (15 October 2012); doi: 10.1117/12.925523; https://doi.org/10.1117/12.925523
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