15 October 2012 Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491E (2012); doi: 10.1117/12.925526
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Being a II-VI semiconductor material with a wide direct band gap corresponding to the U-V region, ZnO finds important applications in U-V light sensors. In this work, we have developed and characterized Au-ZnO-ITO based UV photosensitive devices whose I-V characteristics show p+-i-n type behaviour and show an increased current under UV illumination. ZnO is employed as the active region. Both ZnO and gold were deposited via rf magnetron sputtering. The I-V characteristics of the fabricated UV sensor indicated a knee voltage of 0.69V. The resistance was observed to decrease by a factor of 3.5 under illumination. Further, we have optically characterized ZnO thin films deposited at different power levels to determine the dependency of various optical constants on deposition process parameters. These thin films were characterized using VASE (Variable Angle Spectroscopic Ellipsometer) and their optical properties including refractive index dispersion, band gap along with film thicknesses were extracted and modeled using WVASE modeling software.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pramod R. Reddy, Sandeep Kashyap, Sunita Mishra, Ashok Paul, Pawan Kapur, "Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491E (15 October 2012); doi: 10.1117/12.925526; https://doi.org/10.1117/12.925526
PROCEEDINGS
6 PAGES


SHARE
KEYWORDS
Zinc oxide

Refractive index

Thin films

Gold

Ultraviolet detectors

Ultraviolet radiation

Resistance

RELATED CONTENT


Back to Top